Abstract

In this study, planar packaging, which improves electrical and thermal conductance and nano-silver paste, which provides lower electrical resistance and higher bonding strength to the electronic module, are employed to package high-temperature SiC power device. Electrical characterization of packaging is conducted under high temperature of 250 oC. The result of forward and reverse I-V measurements shows that electrical performance of packaging die meets specifications. Therefore, the materials selection and packaging design enable power SiC diode to work properly under high temperature of 250 oC. Nanosilver paste and planar interconnection structure are proven to enable power device to work well under high temperature operating condition.

 

Biography

Naili Yue graduated from National University of Singapore with M.S. in metal-matix-composite. He has some experience on semiconductor fabrication, flip-chip interconnection of microwave and optical devices and building of optical transceiver module. His current research includes materials selection and characterization in packaging of power devices and assembly of power module, and electrical test.