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Levon V. Asryan
Recent Publications
Journal Papers
Review papers on theory of quantum dot lasers
L.V. Asryan and R.A. Suris, "Theory of threshold characteristics of
semiconductor quantum dot lasers," Semicond., vol. 38,
no. 1, pp. 1-22, Jan. 2004.
L.V. Asryan and R.A. Suris, "Theory of threshold characteristics of
quantum dot lasers: Effect of quantum dot parameter dispersion," International
J. High Speed Electron. Syst., Special Issue on "Quantum Dot
Heterostructures - Fabrication, Application, Theory," vol. 12,
no. 1, pp. 111-176, Mar. 2002.
Papers on general theoretical approach to threshold and power
characteristics of semiconductor lasers with a quantum-confined active
region
L.V. Asryan. "Spontaneous radiative recombination and nonradiative
Auger recombination in quantum-confined heterostructures." Quantum
Electron. , vol. 35, no. 12, pp. 1117-1120, Dec. 2005.
L.V. Asryan and S. Luryi, "Effect of
internal optical loss on threshold characteristics of semiconductor lasers
with a quantum-confined active region," IEEE J. Quantum
Electron., vol. 40, no. 7, pp. 833-843, July 2004.
L.V. Asryan and S. Luryi, "Two lasing thresholds in semiconductor
lasers with a quantum-confined active region," Appl. Phys. Lett.,
vol. 83, no. 26, pp. 5368-5370, Dec. 2003.
L.V. Asryan, S. Luryi and R.A. Suris,
"Internal efficiency of semiconductor lasers with a quantum-confined
active region," IEEE J. Quantum Electron., vol. 39, no.
3, pp. 404-418, Mar. 2003.
L.V. Asryan, S. Luryi and R.A. Suris, "Intrinsic nonlinearity of the
light-current characteristic of semiconductor lasers with a
quantum-confined active region," Appl. Phys. Lett., vol.
81, no. 12, pp. 2154-2156, Sept. 2002.
Papers on temperature-insensitive semiconductor laser
L.V. Asryan and S. Luryi, "Temperature-insensitive
semiconductor quantum dot laser," Solid-State Electron.,
vol. 47, no. 2, pp. 205-212, Feb. 2003.
L.V. Asryan and S. Luryi,
"Tunneling-injection quantum-dot laser: ultrahigh temperature
stability," IEEE J. Quantum Electron., vol. 37, no. 7, pp.
905-910, July 2001.
Papers on theory of quantum dot lasers
L. Jiangand L.V. Asryan.
"Internal-loss-limited maximum operating temperature and
characteristic temperature of quantum dot laser." Laser Phys. Lett.,
vol. 4, no. 4, pp. 265-269, Apr. 2007.
L. Jiang and L.V. Asryan.
"Excited-state-mediated capture of carriers into the ground state and
the saturation of optical power in quantum-dot lasers". IEEE
Photon. Technol. Lett., vol. 18, no. 24, pp. 2611-2613, Dec. 2006.
L.V. Asryan. "Maximum power of quantum dot laser versus internal
loss." Appl. Phys. Lett. , vol. 88, no. 7,
Art. no. 073107, pp. 073107-1-073107-3, Feb. 2006.
L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D.
Bimberg, "Maximum modal gain of a self-assembled InAs/GaAs quantum-dot
laser," J. Appl. Phys., vol. 90, no. 3, pp. 1666-1668,
Aug. 2001.
L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, and D.
Bimberg, "Effect of excited-state transitions on the threshold
characteristics of a quantum dot laser," IEEE J. Quantum
Electron., vol. 37, no. 3, pp. 418-425, March 2001.
L.V. Asryan and R.A. Suris, "Carrier Photoexcitation from Levels in
Quantum Dots to States of the Continuum in Lasing," Semicond.,
vol. 35, no. 3, pp. 343-346, March 2001.
L.V. Asryan and R.A. Suris, "Longitudinal spatial hole burning in a
quantum-dot laser," IEEE J. Quantum Electron., vol. 36,
no. 10, pp. 1151-1160, Oct. 2000.
L.V. Asryan and R.A. Suris, "Spatial hole burning and multimode
generation threshold in quantum-dot lasers," Appl. Phys. Lett.,
vol. 74, no. 9, pp. 1215-1217, March 1999.
L.V. Asryan and R.A. Suris, "Role of thermal ejection of carriers in
the burning of spatial holes in quantum dot lasers," Semicond.,
vol. 33, no. 9, pp. 981-984, Sept. 1999.
L.V. Asryan and R.A. Suris, "Temperature dependence of the threshold
current density of a quantum dot laser," IEEE J. Quantum
Electron., vol. 34, no. 5, pp. 841-850, May 1998.
L.V. Asryan and R.A. Suris, "Characteristic temperature of quantum dot
laser," Electron. Lett., vol. 33, no. 22, pp. 1871-1872,
Oct. 1997.
L.V. Asryan and R.A. Suris, "Charge neutrality violation in quantum
dot lasers," IEEE J. Select. Topics Quantum Electron., vol.
3, no. 2, pp. 148-157, Apr. 1997.
L.V. Asryan and R.A. Suris, "Inhomogeneous line broadening and the
threshold current density of a semiconductor quantum dot laser," Semicond.
Sci. Technol., vol. 11, no. 4, pp. 554-567, Apr. 1996.
Papers on experiment and theory of quantum dot lasers
L.V. Asryan. "Limitations on standard procedure of determining
internal loss and efficiency in quantum dot lasers." J.
Appl. Phys. , vol. 99, no. 1, Art. no. 013102, pp.
013102-1-013102-4, Jan. 2006.
M.V. Maksimov, D.S. Sizov, A.G. Makarov, I.N. Kayander, L.V. Asryan,
A.E. Zhukov, V.M. Ustinov, N.A. Cherkashin, N.A. Bert, N.N. Ledentsov, and
D. Bimberg, "Effect of Nonradiative Recombination Centers on
Photoluminescence Efficiency in Quantum Dot Structures," Semiconductors,
vol. 38, no. 10, pp. 1207-1211, Oct. 2004.
M.V. Maximov, L.V. Asryan, Yu.M. Shernyakov, A.F. Tsatsul'nikov, I.N.
Kaiander, V.V. Nikolaev, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, A.E.
Zhukov, Zh.I. Alferov, N.N. Ledenstov, and D. Bimberg, "Gain and threshold
characteristics of long wavelength lasers based on InAs/GaAs quantum dots
formed by activated alloy phase separation," IEEE J. Quantum
Electron., vol. 37, no. 5, pp. 676-683, May 2001.
M.V. Maximov, Yu.M. Shernyakov, A.F. Tsatsul'nikov, A.V. Lunev, A.V.
Sakharov, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, P.S. Kop'ev,
L.V. Asryan, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, A.O. Kosogov, and
P. Werner, "High-power continuous-wave operation of a InGaAs/AlGaAs
quantum dot laser," J. Appl. Phys., vol. 83, no. 10, pp.
5561-5563, May 1998.
On-line papers on theory of quantum dot lasers
L.V. Asryan and R.A. Suris, "Theory of the
threshold current of a semiconductor quantum dot laser," Ioffe
Institute Prize Winners, 1998. pp. 52-59.
Papers on quantum well lasers
L.V. Asryan, N.A. Gun'ko, A.S. Polkovnikov, G.G. Zegrya, R.A. Suris, P.-K.
Lau, and T. Makino, "Threshold characteristics of InGaAsP/InP multiple
quantum well lasers," Semicond. Sci. Technol., vol. 15,
no. 12, pp. 1131-1140, Dec. 2000.
L.V. Asryan, N.A. Gun'ko, A.S. Polkovnikov, R.A. Suris, G.G. Zegrya, B.B.
Elenkrig, S. Smetona, J.G. Simmons, P.-K. Lau, and T. Makino, "High
power and high temperature operation of InGaAsP/InP multiple quantum well
lasers," Semicond. Sci. Technol., vol. 14, no. 12, pp.
1069-1075, Dec. 1999.
Conference Proceedings
CLEO
L.V. Asryan. "Internal Loss as a Limiting Factor for the Maximum
Power of a Quantum Dot Laser". CLEO'2005. Baltimore, MD,
22-27 May 2005. Paper no. CThH4.
L.V. Asryan, S. Luryi and R.A. Suris,
"Theory of high power performance of a quantum dot laser,"
Technical Digest of CLEO'2002. Long
Beach, CA, USA, 19-24 May 2002. pp.
600-601.
IEEE/LEOS
L.V. Asryan and R.A. Suris, "Critical tolerable parameters of a
quantum dot laser structure," IEEE/LEOS Summer Topical Meeting on
Nanostructures and Quantum Dots. San
Diego, CA, USA, 26-27 July 1999.
Conference Digest, pp. 9-10.
L.V. Asryan and R.A. Suris, "Spatial hole burning and multimode generation
threshold in quantum dot lasers," Proceedings of IEEE LEOS 11th Annual
Meeting, Orlando, FL, December 1-4, 1998. vol. 1, pp.
113-114.
L.V. Asryan, N.A. Gun'ko, A.S. Polkovnikov, G.G. Zegrya, and R.A. Suris,
B.B. Elenkrig, S. Smetona, J.G. Simmons, P.-K. Lau and T. Makino,
"Heating effect on light-current characteristics of multiple quantum
well lasers," Proceedings of IEEE LEOS 11th Annual Meeting, Orlando, FL,
December 1-4, 1998. vol. 2, pp. 108-109.
L.V. Asryan and R.A. Suris, "Theoretical analysis of the temperature
dependence of threshold current density of a quantum dot laser,"
Proceedings of IEEE LEOS 10th Annual Meeting, San Francisco, CA,
November 10-13, 1997. vol. 2, pp. 496-497.
L.V. Asryan and R.A. Suris, "To the theory of quantum dot lasers:
self-consistent consideration of quantum dot charge," 15th IEEE
International Semiconductor Laser Conference. Haifa, Israel,
October 13-18, 1996. Conference Digest, pp. 107-108.
SPIE
L. Jiang and L.V. Asryan.
"Effect of excited states on light-current characteristic of a quantum
dot laser". Proceedings of SPIE's International
Symposium Photonics West. San
Jose, CA, 20-25
January 2007. vol. 6481, pp. 648108-1--648108-7.
L. Jiang and L.V. Asryan.
"Maximum operating temperature and characteristic temperature of a
quantum dot laser in the presence of internal loss". Proceedings
of SPIE's International Symposium Photonics West. San Jose, CA,
20-25 January 2007. vol. 6481, pp. 648107-1--648107-6.
L.V. Asryan. "Feasibility of conventional method of extracting internal
loss and internal quantum efficiency in edge-emitting quantum dot
lasers." Proceedings of SPIE's International Symposium Photonics West.
San Jose, CA, January 21-26, 2006. vol. 6129, pp.
21-28.
L.V. Asryan and S. Luryi, "Internal
optical loss and threshold characteristics of semiconductor lasers with a
reduced-dimensionality active region," Proceedings of SPIE's
International Symposium Photonics West. San Jose, CA, USA, 24-29 January 2004. vol.
5349, pp. 69-80.
L.V. Asryan and S. Luryi, "Tunneling-injection quantum dot
laser," Proceedings of SPIE's International Symposium Photonics
West. San Jose, CA, USA,
19-25 January 2002. vol. 4656, pp. 59-68.
L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, and D. Bimberg,
"Effect of excited-state transitions on the threshold characteristics
of a quantum dot laser," Proceedings of SPIE's International Symposium
Photonics West. San Jose,
CA, USA,
22-28 January 2000. vol. 3944, pp. 823-834.
L.V. Asryan and R.A. Suris, "Spatial hole burning in a quantum dot
laser," Proceedings of SPIE's International Symposium Photonics
West. San Jose, CA, USA,
23-29 January 1999. vol. 3625, pp. 293-301.
L.V. Asryan and R.A. Suris, "Temperature sensitivity of threshold
current density of a quantum dot laser," Proceedings of SPIE's
International Symposium Photonics West. San Jose, CA, USA, 26-30 January 1998. vol.
3283, pp. 816-827.
R.A. Suris and L.V. Asryan, "Quantum-Dot Laser: Gain Spectrum
Inhomogeneous Broadening and Threshold Current," Proceedings of SPIE's
1995 International Symposium Photonics West. San Jose, CA, USA, 4-10 February 1995. vol.
2399, pp. 433-444.
International Conferences on the Physics of Semiconductors
L.V. Asryan and R.A. Suris, "Spatial hole burning in quantum dot
lasers," Proceedings of the 24rd International Conference on the
Physics of Semiconductors. Jerusalem,
Israel,
August 2-7, 1998. Editor D. Gershoni, World Scientific, Singapore,
Electronic version (CD).
L.V. Asryan and R.A. Suris, "Charge neutrality violation in quantum
dot lasers," Proceedings of the 23rd International Conference on the
Physics of Semiconductors. Berlin,
Germany,
July 21-26, 1996. Editors M. Scheffler, R. Zimmermann, World Scientific, Singapore,
vol. 2, pp. 1369-1372.
International Symposia "Nanostructures: Physics and
Technology"
L.V. Asryan. "Optical power of a quantum dot
laser". Proceedings of 14th International Symposium "Nanostructures:
Physics and Technology". June 26-30, 2006, St. Petersburg, Russia.
pp. 7-8.
L.V. Asryan and R.A. Suris, "Theory of threshold characteristics of
quantum dot lasers," Proceedings of International Symposium
"Nanostructures: Physics and Technology". June 18-23, 2000, St.Petersburg, Russia. pp. 6-11.
L.V. Asryan and R.A. Suris, "Effect of spatial hole burning and
multi-mode generation threshold in quantum dot lasers," Proceedings of
International Symposium "Nanostructures: Physics and Technology".
June 22-26, 1998, St.Petersburg,
Russia. pp.
390-393.
L.V. Asryan and R.A. Suris, "Effect of carrier recombination in the
optical confinement layer on the temperature dependence of threshold
current density of a quantum dot laser," Proceedings of International
Symposium "Nanostructures: Physics and Technology". June 23-27,
1997, St.Petersburg, Russia. pp. 176-179.
L.V. Asryan and R.A. Suris, "Gain and Current Density of Quantum Dot
Laser," Proceedings of International Symposium "Nanostructures:
Physics and Technology". June 24-28, 1996, St.Petersburg, Russia.
pp. 354-357.
L.V. Asryan and R.A. Suris, "Linewidth Broadening and Threshold
Current Density of Quantum-Box Laser," Proceedings of International
Symposium "Nanostructures: Physics and Technology". June 20-24,
1994, St.Petersburg, Russia. pp. 181-184.
International Semiconductor Device Research Symposia
L.V. Asryan. "Slope efficiency versus cavity length in quantum dot
lasers". Proceedings of 2005 International Semiconductor Device
Research Symposium - ISDRS'2005. Holiday Inn Select, Bethesda, MD,
December 7-9, 2005. Paper no. FA6-05.
L.V. Asryan and S. Luryi,
"Temperature-insensitive quantum dot laser," Proceedings of 2001
International Semiconductor Device Research Symposium - ISDRS'2001. Holiday
Inn Georgetown, Washington, DC,
December 5-7, 2001. pp. 359-363.
L.V. Asryan and R.A. Suris, "To the theory of temperature dependence
of threshold current density of a quantum dot laser," Proceedings of
1997 International Semiconductor Device Research Symposium - ISDRS'97. Omni
Charlottesville Hotel, Charlottesville,
VA, December 10-13, 1997. pp.
433-436.
International Symposium and Spring School
"Nano and Giga Challenges in Electronics and Photonics”
L. Jiang and L.V. Asryan.
"Maximum operating temperature of quantum dot laser." Abstracts
of International Symposium and Spring
School "Nano and
Giga Challenges in Electronics and Photonics". Phoenix, Arizona,
March 12-16, 2007. p. 37.
L.V. Asryan. "Operational
limits of high power quantum dot lasers." Abstracts of International
Symposium and Spring School "Nano and Giga Challenges in
Electronics and Photonics". Phoenix, Arizona,
March 12-16, 2007. p. 36.
Invited Presentations & Papers
L.V. Asryan. "Operational limits of high power
quantum dot lasers." International Symposium and Spring School "Nano and Giga
Challenges in Electronics and Photonics". Phoenix, Arizona,
March 12-16, 2007.
L.V. Asryan. "Light-current characteristic of a quantum dot
laser." Proceedings of International Workshop on "Semiconductor
quantum dot based devices and applications". INSTITUT CURIE, Paris, France,
16-17 March 2006.
L.V. Asryan and S. Luryi, "Tunneling-injection quantum dot
laser," Proceedings of SPIE's International Symposium PHOTONICS
WEST'2002. San Jose, CA, USA,
19-25 January 2002. vol. 4656, pp. 59-68.
L.V. Asryan and R.A. Suris, "Theory of threshold characteristics of
quantum dot lasers," Proceedings of International Symposium
"Nanostructures: Physics and Technology". June 18-23, 2000, St.Petersburg, Russia. pp. 6-11.
L.V. Asryan and R.A. Suris, "Theory of threshold characteristics of
quantum dot lasers," Abstracts of the 3rd Belarusian-Russian Workshop
"Semiconductor lasers and systems". Minsk, Belarus,
June 22-24, 1999. p. 12.
Books/Chapters/Editorships
Review chapters on theory of quantum dot lasers
L.V. Asryan and S. Luryi, "Quantum
dot lasers: Theoretical Overview," Chapter 4 (113-158) in Semiconductor
Nanostructures for Optoelectronic Applications. Edited by Todd
Steiner, Artech House: Boston,
December 2004, 424 p., ISBN 1-58053-751-0.
L.V. Asryan and R.A. Suris, "Theory of threshold characteristics of
quantum dot lasers: Effect of quantum dot parameter dispersion,"
Chapter 5 in Selected Topics in Electronics and Systems, vol.
25, "Quantum Dots." Edited by E. Borovitskaya and M.S. Shur, Singapore:
World Scientific, 2002. 206 p.
Chapters on theory of quantum dot lasers
L.V. Asryan and S. Luryi, "Temperature-insensitive semiconductor
laser," Future Trends in Microelectronics: The Nano Millennium.
Edited by S. Luryi, J.M. Xu, and A. Zaslavsky, Wiley Interscience, New York, 2002. pp.
219-230.
Updated 10/28/06
Asryan Patents
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